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New Yorker Electronics premieres new Vishay Best-in-Class 30V N-Channel Power MOSFET

Vishay Siliconix SiSS52DN N-Channel TrenchFET Gen V Power MOSFET

Vishay Siliconix MOSFET Delivers High Power Density and Efficiency; Provides On-resistance of 1.5mΩ at 4.5V

June 17, 2021 - New Yorker Electronics has announced its release of the new Vishay Siliconix 30V N-Channel TrenchFET® Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies. Offered in the 3.3mm by 3.3mm thermally enhanced PowerPAK® 1212-8S package, the Vishay Siliconix SiSS52DN features best in class on-resistance of 0.95mΩ at 10V, a 5% improvement over the previous generation product.

Vishay Siliconix SiSS52DN N-Channel TrenchFET Gen V Power MOSFET

Part Information
30V SiSS52DN-T1-GE3

In addition, the device delivers on-resistance of 1.5mΩ at 4.5V, while its 29.8mΩ*nC on-resistance times gate charge at 4.5V — a critical figure of merit (FOM) for MOSFETs used in switching applications — is one of the lowest on the market. The SiSS52DN’s FOM represents a 29% improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications. It has a temperature range of -55° to +150°.

The single configuration SiSS52DN is ideal for low side switching for synchronous rectification, synchronous buck converters, DC/DC converters, switch tank topologies, OR-ring FETs, and load switches for power supplies in servers and telecom and RF equipment. By delivering high performance in isolated and non-isolated topologies, the MOSFET simplifies part selection for designers working with both. The new device is also 100% RG- and UIS-tested, RoHS-compliant and halogen-free.

Vishay Siliconix SiSS52DN N-Channel TrenchFET Gen V Power MOSFET

New Yorker Electronics supplies Vishay Siliconix power semiconductor products including low-voltage power MOSFETs (metal-oxide semiconductor field-effect transistors), higher-voltage Vishay Siliconix power MOSFETs and Power ICs.

Features & Benefits:

TrenchFET® Gen V power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Enables higher power density with very low RDS(on) and thermally enhanced compact package
TrenchFET® Gen V power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Enables higher power density with very low
RDS(on) and thermally enhanced compact package
100% Rg and UIS tested

Applications:

DC/DC converter
POL
Synchronous rectification
Battery management
Power and load switch

Additional Information:

SiSS52DN 30V N-Channel MOSFET Data Sheet

RELATED TOPICS -- ELECTRONIC COMPONENT:

Vishay 600V E Series power MOSFETs Vishay SiC530 TrenchFET VRPower IC Vishay Siliconix SUM/SUP Power MOSFET

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